Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
55 (1989), S. 1115-1117
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Effects of low-energy ion beam on the growth rate, cluster dynamics, and evolution of surface morphology in molecular beam epitaxical growth of a III-V compound semiconductor are examined via Monte Carlo simulations. It is shown that for beams incident at a shallow angle (〈10°), the effects can vary significantly with the azimuthal orientation. It is also demonstrated that use of an ion beam can lead to improved surface morphology in the case of growth of alloys.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.101674
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