Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
54 (1989), S. 2698-2700
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon dioxide to silicon etch selectivity in reactive ion etching (RIE) employing fluorocarbon gases is due to the formation of a fluorocarbon film on the substrate. This implies that etch selectivity is not achieved instantly but that the substrate will exhibit a transient etch rate and hence material loss during the film formation period. The amount of silicon lost during overetching for CF4/H2 RIE was determined by Rutherford backscattering spectrometry employing a buried marker. For standard etching conditions, about 7 nm of silicon is lost within the first minute of overetching as compared to 1.5 nm expected from steady-state etch rate data. The Si etch rate varies strongly as a function of time and decreases by a factor of greater than 10 within the first 30 s of overetching to approach a steady-state value.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.100673
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