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Ion beam induced epitaxy of deposited amorphous Si and Si-Ge films (1989)

Yu, A. J. ; Mayer, J. W. ; Eaglesham, D. J. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 54 (1989), S. 2342-2344

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The epitaxial recrystallization of amorphous electron beam deposited silicon and silicon-germanium layers on 〈100〉 silicon substrates was induced by a 2.5 MeV Ar beam irradiation in the temperature range of 200–400 °C. Even in films with bulk oxygen concentration of 0.5 at. %, layer-by-layer regrowth was observed with an order of magnitude reduction in growth rate when compared to clean, implanted amorphous silicon. Irradiation of codeposited Si-Ge amorphous layers results in the layer-by-layer regrowth of a Si88Ge12 alloy. Ion beam assisted epitaxy of Si and Si-Ge was found to be sensitive to interfacial cleanliness, but layer-by-layer regrowth was observed for samples that did not demonstrate regrowth under conventional furnace annealing.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.101523

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