Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
52 (1988), S. 1692-1694
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Misfit stress relaxation phenomena were investigated in InGaAs-GaAsP strained-layer superlattice layers as a function of period thickness using x-ray diffraction topography and electron-beam-induced current techniques. By controlling the thickness of the individual layer, as well as the total thickness of an InGaAs/GaAsP strained-layer superlattice, we have achieved a defect density reduction in GaAs epilayers grown on GaAs substrates. Several strained-layer superlattice buffer layers whose period thickness varied from 80 to 120 nm have been studied.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99638
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