ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
ZnSe-based structures have been fabricated, consisting of monolayers of ZnTe grown by atomic layer epitaxy spaced by appropriate dimensions to approximate a Zn(Se,Te) mixed crystal; this method has been used to overcome the difficulties encountered in the molecular beam epitaxy (MBE) of the alloy with a low Te concentration. Reported work has shown that blue-blue/green luminescence, originating from exciton self-trapping at Te sites in Zn(Se,Te) bulk crystal alloys, is significantly more intense than the light emitted from ZnSe. Luminescence originating from ZnTe-containing ZnSe/ZnTe superlattice and ZnSe/(Zn,Mn)Se multiple quantum well structures was used to illustrate how the presence of ZnTe acts to trap excitons. Optical signatures of the MBE-grown structures were similar to those of the random alloy, indicating that the exciton self-trapping mechanism is important to the interpretation of recombination processes in structures containing ZnSe/ZnTe heterointerfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.99217
