Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 877-879
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A transverse mode stabilized GaAlAs laser diode which includes a ZnSe layer for the waveguide has been developed. The double heterostructure of the GaAlAs laser is formed by low-pressure metalorganic chemical vapor deposition (MOCVD), and a ZnSe layer is grown by adduct-source MOCVD in order to block the injection current and change the real refractive index in the lateral direction. The fundamental transverse mode oscillation of more than 15 mW is obtained with a low threshold current of 28 mA and a high quantum efficiency of 76%. An output power as high as 25 mW is achieved.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98841
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