Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
51 (1987), S. 919-921
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Electrical and structural characteristics of thin thermally oxidized yttrium layers on Si and on Si covered with 40 A(ring) of SiO2 have been investigated. The factor of ∼ four advantage in the dielectric constant of Y2O3 over SiO2, coupled with extremely low leakage current density of better than 10−10 A/cm2 in a field of 1.9 MV/cm, sufficiently high breakdown strength, and well-behaved capacitance-voltage characteristics makes Y2O3 a viable candidate for Si very large scale integration applications, at least in passive devices. High-resolution transmission electron microscopy reveals the structure of the composite dielectric and provides good agreement between calculated and experimental capacitance.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.98801
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