Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 5882-5886
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
B1–NaCl-structure CrN(001) layers were grown on MgO(001) at 600 °C by ultrahigh vacuum reactive magnetron sputter deposition in pure N2 discharges. X-ray diffraction analyses establish the epitaxial relationship as cube-on-cube, (001)CrN(parallel)(001)MgO with [100]CrN(parallel)[100]MgO, while temperature-dependent measurements show that the previously reported phase transition to the orthorhombic Pnma structure is, due to epitaxial constraints, absent in our layers. The resistivity increases with decreasing temperature, from 0.028 Ω cm at 400 K to 271 Ω cm at 20 K, indicating semiconducting behavior with hopping conduction. Optical absorption is low (α〈2×104 cm−1) for photon energies below 0.7 eV and increases steeply at higher energies. In situ ultraviolet photoelectron spectra indicate that the density of states vanishes at the Fermi level. The overall results provide evidence for CrN exhibiting a Mott–Hubbard type band gap. © 2002 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1466528
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