Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
91 (2002), S. 4932-4935
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Structural and compositional analyses of a MnSi layer have been performed to elucidate the growth mechanism. The MnSi layer was grown by reactive deposition epitaxy in the presence of an Sb flux. The existence of Sb was found at the MnSi/Si interface and on the surface of MnSi layer by secondary ion mass spectrometry. In addition, x-ray photoelectron spectroscopy measurement shows that MnSb is formed on the surface of the grown MnSi layer. On the atomic scale, scanning transmission electron microscopy observations reveal the existence of an Sb–Mn–Sb structure at the interface between the MnSi layer and the Si substrate. The formation of the MnSb plays an important role for the improvement of crystalline quality of the silicide layer, acting both as a surfactant and as a compliant substrate for stress relief. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1461063
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