ZIB

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure (2001)

Liu, X. Q.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 90 (2001), S. 5438-5440

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Transient band-gap renormalization (BGR) effects are investigated in AlGaAs/GaAs V-grooved quantum structures. The temperature-dependent transient BGR effects in the sidewall quantum well (SQWL) provide direct evidence of the existence of the blocking effect by the necking region barrier on the carrier trapping process. These effects provide a useful method to show the existence of the necking region, particularly for very thin SQWL structures. The temperature-dependent lifetimes of the SQWL and quantum wire (QWR) provide further proof of the carrier trapping process from the SQWL to the QWR. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1410317

Library	Location	Call Number	Volume/Issue/Year	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit