Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
89 (2001), S. 5797-5799
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the characterization of the nanopipe/dislocation related defects in silicon carbide (SiC) wafers using a ballistic electron emission microscopy (BEEM) technique. While the rest of the techniques were just limited to providing structural information such as length and width, the dual mode of the BEEM technique is shown to provide physical insight into the nature of these defects in SiC. The presence of excess of carrier density at the dislocation site, and its impact on the device characteristics in terms of junction breakdown, is discussed within the scope of our experimental results. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1365938
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