Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
88 (2000), S. 1827-1830
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Nitrogen self-diffusion studies in amorphous precursor-derived Si3BC4.3N2 ceramics were carried out, using ion implanted stable 15N isotopes as tracers and secondary ion mass spectrometry for depth profiling. The analysis of the diffusion profiles in the range of 1500–1700 °C did not show the typical Gaussian broadening of the implantation profiles. Instead, we observed the occurrence of a high concentration region where the width of the implantation profile is nearly unchanged due to implantation damage, and a low concentration region where diffusion occurs. The experimentally determined diffusivities obey an Arrhenius behavior with an activation enthalpy of about H=7 eV and a pre-exponential factor D0 in the order of 5 m2/s which indicates a diffusion mechanism via vacancy-like defects. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1305903
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