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Controlling garnet film composition by magnetic-field-controlled radio frequency magnetron sputtering (2000)

Furuya, A. ; Baubet, C. ; Yoshikawa, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 87 (2000), S. 6776-6778

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: To find a way to control the compositional change in Bi-substituted garnet during sputtering, we studied the effects of controlling the cathode magnetic field. The magnetic-field-controlled rf magnetron sputtering method that we developed can create a garnet film whose composition is the same as that of the sputtering target. When we deposited a film of Bi-substituted Dy iron garnet–ferrite (Bi2DyFe4GaO12) by this method, there was no compositional change between the target and the film even after a long sputtering process. Therefore, this sputtering method is effective at suppressing compositional change during the film formation process. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.372838

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