Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
87 (2000), S. 2901-2909
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The modulated photoconductivity technique, a convenient means of measuring the drift mobility of photocarriers, has been applied to investigate carrier transport in hydrogenated amorphous silicon. The frequency resolved spectra of drift mobility that can be obtained from the measurements were analyzed in accordance with a generalized transport model that included possible carrier interactions between localized states through tunneling transitions. Theory suggests that a tunneling-assisted thermalization of nonequilibrium carriers appreciably affects the transport process. The experimental results are reasonably accounted for by the introduced model, leading to quantitative assessments for transport mechanisms. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.372275
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