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Simple interpretation of metal/wurtzite–GaN barrier heights (1999)

Bermudez, V. M.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 1170-1171

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Photoemission data for the dependence of the Schottky barrier height on the metal work function, for n-type wurtzite GaN, are discussed in terms of the Cowley–Sze model [J. Appl. Phys. 36, 3212 (1965)] for a uniform density of surface states in the band gap. It is suggested that, in the context of this model, such barrier heights can be expressed largely as a sum of the "bare-surface barrier height" (i.e., the band bending before contact formation) and a Mott–Schottky term. © 1999 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.370861

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