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Digitale Medien

Thermoelectric power in porous silicon (1998)

Mathur, R. G. ; Mehra, R. M. ; Mathur, P. C.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 5855-5857

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Thermoelectric power measurements have been made on macroporous (pore width 〉500 Å°) porous silicon samples prepared by an anodic dissolution technique. The sign of thermopower is found to be negative indicating that conduction takes place due to electrons in the conduction band. The conduction mechanism is found to be due to variable range hopping near the Fermi level for temperatures below 150 K. At higher temperatures the conduction is due to the tunneling of carriers in the localized states in the band edges. It was concluded that these localized states are formed because the nanocrystallites in porous silicon are randomly distributed in size and orientation leading to fluctuations in band gap. This results in the constitution of a disordered system on a macroscopic scale. © 1998 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.367444

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