ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We present photoconductivity data on GaAs quantum wires grown on a V-grooved substrate by flow rate modulation epitaxy. They show that a moderate excitation power density, ∼1 W/cm2, allows the observation of the absorption structure of a single GaAs quantum wire embedded in a p-i-n diode. Furthermore, by increasing the number of active wires inside a diode, the photoconductivity signal is enhanced and additional details of the absorption structure are evidenced. And, finally, a rough quantitative agreement is obtained between the experimental absorption transitions and a simple calculation of the one-dimensional excitonic states using the envelope function approximation. © 1997 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.364410
