Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
80 (1996), S. 4045-4048
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Near band edge absorption spectra of the narrow-gap semiconductor alloys InxTl1−xP, InxTl1−xAs, and InxTl1−xSb were calculated and compared with those of HgxCd1−xTe. To test accuracy, we compared the calculated absorption spectra in GaAs with experimental results and found good agreement. Within 50 meV from the absorption edge, the absorption coeffi cient of InxTl1−xP is found to have about the same magnitude as that in HgxCd1−xTe and GaAs, whereas that in InxTl1−xAs and InxTl1−xSb is much smaller. This result and other merits found from previous studies indicate that InxTl1−xP has a potential to compete favorably with HgxCd1−xTe for long-wavelength infrared applications. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.363364
| Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |
