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Digitale Medien

Sharp line injection luminescence from InP quantum dots buried in GaInP (1996)

Anand, S. ; Lindahl, J. ; Pistol, M-E. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 80 (1996), S. 1251-1253

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: InP quantum dots embedded in Ga0.5In0.5P are investigated by injection luminescence. By using a masking technique we have improved the spatial resolution. At 77 K, the luminescence peak of the fully formed InP dots occurs at about 1.62 eV. In addition, in the 1.7–1.8 eV energy range, we observe a rich structure in the spectra with several sharp lines typically 3 meV in width. The origin of this luminescence is attributed to the partially formed InP quantum dots. This injection luminescence band also exhibits spatial variations both in the envelope as well as in the fine structure. © 1996 American Institute of Physics.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.362866

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