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Epitaxial growth of Y-doped SrZrO3 films on MgO by pulsed laser deposition (1996)

Beckers, L. ; Sanchez, F. ; Schubert, J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 3337-3339

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Epitaxial thin films of Y-doped SrZrO3 have been grown on MgO(001) by pulsed laser deposition. The deposition process has been performed at temperatures of 1000–1200 °C and at an oxygen pressure of 1.5×10−1 mbar. The samples are characterized by Rutherford backscattering spectrometry/channeling (RBS/C) and x-ray diffraction (XRD). We found an epitaxial relationship of SrZrO3 (0k0) [101](parallel)MgO (001) [100]. Good crystalline quality is confirmed by RBS/C minimum yield values of 9% and a FWHM of 0.35° of the XRD rocking curve. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.361234

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