Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 2337-2342
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Plasma hydrogenation of Czochralski Si has been performed to investigate the introduction of Si–O stretch modes and their correlation with thermal donor formation. Plasma hydrogenation at 275 °C introduces a well-resolved vibrational absorption band at 1005 cm−1, while absorption due to electronic excitations for thermal donors remains weak. We attribute this band to a Si–O precursor center for thermal donor formation, and suggest it is the oxygen dimer center discussed in other studies of oxygen in Si. Vibrational modes introduced at 990 and 1000 cm−1 during post-hydrogenation furnace annealing at 400 °C correlate with thermal donors TD2 and TD3, respectively. Stretch frequencies for Si–O in thermal donor centers are compared to those for oxygen aggregates in oxygen-implanted and electron-irradiated Si.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.362658
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