ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the formation of silicon oxide thin films at room temperature obtained by Ar+ ion bombardment of Si(100) wafers in partial oxygen atmosphere. Samples have been prepared at several ion beam energies (0≤Eb≤400 eV) and characterized by x-ray photoelectron spectroscopy. The oxidation rate, as well as the SiO2/SiOx (x=0.5, x=1, and x=1.5) ratio, have been found to increase with the ion beam energy. For the highest energy bombardment, Eb=400 eV, we observed the formation of a uniform, electrically insulating, SiO2 top layer about 37 A(ring) thick. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359896