Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
78 (1995), S. 4196-4199
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The improvements of the AlGaAs solar cell grown on the Si substrate and the AlGaAs/Si tandem solar cell by metalorganic chemical vapor deposition have been investigated. The active-area conversion efficiency of the Al0.1Ga0.9As solar cell on the Si substrate as high as 12.9% has been obtained by improving the growth sequence and adopting an Al compositionally graded band emitter layer. A high efficiency monolithic AlGaAs/Si tandem solar cell with the active-area conversion efficiency of 19.9% and 20.6% (AM0 and 1 sun at 27 °C) under two-terminal and four-terminal configurations, respectively, is demonstrated. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.359880
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