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Crystallization process of amorphous GaSb films studied by Raman spectroscopy (1995)

Dias da Silva, J. H. ; da Silva, S. W. ; Galzerani, J. C.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 4044-4048

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Thermal annealings of amorphous gallium antimonide films were accompanied using Raman spectroscopy, both for stoichiometric and nonstoichiometric compositions. The films were prepared by flash evaporation on silicon substrates. Structural changes were induced by the heat treatments: an increasing degree of crystallization as a function of the annealing temperature is observed. Sb clusters are found to crystallize before GaSb does, and the dependence of the corresponding Raman peak intensity with the annealing temperature (occurring in two regimes) is explained. A mechanism for the crystallization of the amorphous GaSb is proposed, based on the prior migration of the Sb excess outside the GaSb region to be crystallized. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359486

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