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Thermal behavior of deep levels correlated with iron in silicon metal-oxide-semiconductor structure (1995)

Kishino, S. ; Iwamoto, S. ; Yoshida, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 77 (1995), S. 2199-2201

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Thermal behavior of deep levels correlated with iron in Si MOS (metal-oxide-semiconductor) structure has been studied by isothermal capacitance transient spectroscopy. As a result, it is shown that interstitial iron scarcely affects the interface trap (Nt) of MOS structure. This is made clear by measuring Nt of Si MOS diodes containing iron impurity, the interstitial component of which is controlled by low temperature annealings. In addition, the low temperature (400 °C) annealing decreases interstitial iron concentration as well as interface trap density. This phenomenon is very lucky for Si MOS devices. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.359543

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