Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
76 (1994), S. 2529-2534
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Current-noise-power spectra of thin-film transistors (TFTs) fabricated from hydrogenated amorphous silicon were measured. TFTs with aspect ratios ranging from 1:1 to 16:1 were examined in both the conducting and nonconducting modes. In the conducting mode, the noise levels could be predicted to within an order of magnitude by theories developed for crystalline metal-oxide field-effect transistors. In the nonconducting mode, the noise was found to scale with the TFT leakage current in a power-law fashion.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.357614
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