Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 4097-4102
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Double-barrier niobium tunnel junctions with the middle electrode thinner than the London penetration depth were fabricated. Their I-V curves, annealing behavior, response to external magnetic field, and response to 230 and 350 GHz irradiation in mixer experiments is discussed. Junctions with an integrated tuning circuit designed for the 230 GHz frequency range gave double-sideband receiver noise temperatures of 100 K. Vertically stack arrays can be attractive for various applications. Compared to single-barrier devices possible drawbacks were noted. The I-V curve indicates heating and/or nonequilibrium effects. Double-barrier devices became nonuniform after thermal annealing at 200 °C. The response to the external magnetic field is more complex and considerably larger flux densities are needed to suppress Josephson effects.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355988
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