Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
75 (1994), S. 7531-7537
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Recombination coefficients of hydrogen have been modeled respectively for the front side and the back side of plasma facing materials. On the front side, both the normal-surface sites and the imperfection-surface sites produced by the energetic ions are taken into account, and the dependence of the aerial density of active recombination sites upon the aerial density of imperfections and the balance between the chemisorption and desorption of impurity atoms at imperfections are discussed. On the back side, the effective recombination coefficient is obtained by analyzing the metal-oxide system. This parameter depends upon the solution energy for the metal and the chemisorption energy on the oxide-layer surface as well as surface coverage, if it is rate-limited by the recombination in the oxide layer; and it increases with increasing diffusion coefficient and decreasing thickness, if it is rate-limited by diffusion in the oxide layer.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.356627
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