Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 4983-4989
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have measured Raman scattering and high-resolution x-ray diffraction from highly strained [(InAs)4(InP)4]N short-period superlattices grown on InP substrates by atomic layer epitaxy at 355 °C. The InAs and InP confined phonons are observed in these highly strained short-period superlattices. The energy of the InAs confined longitudinal-optical phonon (LO) modes of a fully strained superlattice (with N=8) is blue shifted by about 10 cm−1 compared to the LO phonon of bulk InAs. This effect is explained by the large biaxial strain existing in the InAs layers. The observed frequency shift agrees with the lattice-mismatch strain given by elasticity theory and independently measured by high-resolution x-ray diffraction. No evidence of a frequency shift of the InP confined LO modes in the N=8 fully strained superlattice is observed, indicating that the strain is confined to the InAs layers. We show that in a partially relaxed superlattice (with N=20), the InAs layers are in compression, while the InP layers are in tension. In this case the InP confined LO1 phonons are red shifted by about 3 cm−1 compared to the InP LO1 phonons of the N=8 fully strained superlattice, and the shift of the InAs confined LO phonons with respect to the LO phonons of bulk InAs is also reduced.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354303
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