Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 2507-2511
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Surfactant-mediated growth of germanium on silicon (001) with submonolayer coverages of antimony and tellurium, respectively, was investigated with reflection high-energy electron diffraction and transmission electron microscopy. Approximately 0.2 monolayer of antimony is needed for a complete suppression of islanding for the growth at 450 °C. For growth at a lower temperature (270 °C), only approximately 10% of a monolayer antimony or tellurium is needed in order to obtain smooth epitaxial germanium layers. No differences could be detected between tellurium and antimony in the behavior as a surfactant. The performed surfactant-mediated growth experiments can be understood as the kinetic suppression of islanding due to a reduction in surface diffusion of germanium adatoms.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354690
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