Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 7311-7314
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A temperature-controlled laser-microwave photoconductance lifetime measurement technique combined with ultraviolet irradiation is used to investigate the electronic transfer process at charge trapping sites, the K centers, in low pressure chemical vapor deposited nitride film on a silicon substrate in the temperature range 300–500 K. A relationship between the lifetime and the space charge in the dielectric film is discussed in order to correlate the lifetime data with electronic transfer process on K centers. An isothermal transfer process is then found following a stretched exponential function of annealing time with a temperature-independent stretched factor around 0.14 and a time constant characteristic of activation energy around 0.81 eV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.354997
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