Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
74 (1993), S. 6632-6635
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Successful growth by molecular beam epitaxy of YbSb2 (010) single crystal films on GaSb(001) has been demonstrated. The YbSb2 films have a room temperature resistivity equal to 40 μΩ cm. YbSb2 has a basal plane rectangular (but almost square) and nearly lattice matched to GaSb. The memory of the GaSb(001) surface orientation is transferred to the YbSb2 surface films, avoiding the formation of inversion domains in the GaSb overlayers. The effects of the lattice mismatches in the basal plane and in the growth direction are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.355104
Library |
Location |
Call Number |
Volume/Issue/Year |
Availability |