Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 5682-5686
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report on the successful epitaxial growth of Fe/Cu superlattices on Si(111) wafers at room temperature. The superlattices were characterized with x-ray diffraction, conversion electron Mössbauer spectrometry, and selected area electron diffraction experiments. The epitaxial growth is crucially dependent on which element is deposited first on the bare Si(111).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351918
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