ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Polycrystalline chalcopyrite AgInS2 films 2.0–3.5 μm thick have been formed on glass substrates. Resistivities, carrier concentrations, and Hall mobilities are measured at room temperature. These quantities are shown to be changed greatly by annealing under maximum S pressure for 1 h at different temperatures. Resistivities of 1–104 Ω cm and carrier concentrations of 2×1015–3×1020 cm−3 are obtained in n-type films. In p-type films, resistivities are found to be higher than 1×104 Ω cm, and carrier concentrations are less than 3×1015 cm−3. The effects of vacancies and interstitials of Ag, In, and S atoms are discussed to explain the observed changes in the electrical properties of the films. Owing to various structural imperfections, Hall mobilities are found to be less than 2 cm2/V s in both n- and p-type films. Au-p-type AgInS2 Schottky diodes have been fabricated. The current–voltage (I–V) and capacitance–voltage (C–V) characteristics are measured at room temperature. The ideality factor is evaluated as about 1.63. In the frequency range 10−4–1 MHz, large frequency dispersion is observed in the C–V curves, and explained in terms of the response of deep defect levels.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.350938
