Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 3286-3290
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A method is presented which, through the simultaneous analysis of the photothermal deflection spectroscopy (PDS) signal amplitude and phase spectra, enables to detect surface states and buried interface states and to measure their absorption. A theoretical model for the PDS signal suitable for the present approach has been developed and the measurements were performed on single crystalline GaAs wafers with ion-implanted layers on the front surface or buried beneath the front surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.348549
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