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Fluorine-containing species on the hydrofluoric acid etched silicon single-crystal surface (1991)

Takahagi, T. ; Ishitani, A. ; Kuroda, H. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 69 (1991), S. 803-807

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The chemical structure and property of fluorine-containing species on the hydrofluoric acid (HF) etched Si surface was examined by use of x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The fluorine content on the surface was found to increase with increase of HF concentration. A silicon surface etched by 50% HF has fluorine of 2.6×1014 atoms/cm2 as Si–F. Most of the Si–F bondings are rapidly hydrolyzed to Si–OH by rinsing the wafer in water. Thus prepared Si–OH groups are found to be useful as active sites for chemical modification of the bare silicon single-crystal surface. The Si–F was observed not to influence the oxidation rate of HF etched silicon surface.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347367

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