Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 1669-1673
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Three levels corresponding to photo energies E0(=1.7 eV), E1(=1.43 eV), and E2 (=energy gap) were observed in differential photocapacitance measurements of Si-doped AlxGa1−xAs grown by metalorganic chemical vapor deposition (0.23〈x〈0.4). On the other hand, E1 and E2 were observed but E0 was not observed in the differential photoconductance measurements. Both photon energies E1 and E2 cause persistent photoconductance (PPC) and the electron concentration coincides with the concentration of Si atoms. Our results support the broken-bond model proposed by D. J. Chadi and K. J. Chang [Phys. Rev. B 39, 10063 (1989)].
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346650
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