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Modeling of electron-beam-controlled semiconductor switches (1990)

Brinkmann, R. P.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 318-323

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The subject of this paper is the mathematical modeling of a recently proposed class of electron-beam-controlled high-power semiconductor switches that are able to overcome the space-charge limitation of conventional electron bombarded semiconductor devices by utilizing the secondary ionization effects of cathodoluminiscence and bremsstrahlung. Current densities of several kA/cm2 at forward voltages some 10 V can be controlled with an electron beam of 100 keV and 1 A/cm2; holdoff voltages of more than 100 kV/cm and dark currents as small as 10 μA/cm2 are possible. The concept has several possible applications: Its fast and repetitive closing and opening under load makes it suitable for inductive energy storage applications; its linear characteristics suggests a use as a high-power modulation device.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.347135

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