Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 4133-4139
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The E0 exciton splitting into Ev10 and Ev20 excitons (due to lattice mismatch), their energy shift and the lifetime broadening are obtained in the GaAs/AlxGa1−xAs alloy system grown by liquid-phase epitaxy from the analysis of spectroscopic ellipsometry measurements in the temperature range between 12 and 800 K. The lifetime broadenings of these excitons at low temperature is shown to be described well by the statistical fluctuations of the alloy composition caused by the random distribution of Al and Ga on the cation sites (Schubert's model). The Ev10 exciton lifetime broadening was found to be larger in the Ga-rich region as compared to the corresponding one of the Ev20 exciton and smaller in the Al-rich region. The former broadening is explained qualitatively by the different effective masses (mv1Γ〉mv2Γ), whereas the latter is produced in terms of the increase in the density of states of the holes in the V2 valence band by the increasing energy splitting δEs with x.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.344974
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