Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 2984-2988
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thin films of III-V nitride semiconductors (AlN, GaN, InN), mixed-crystalline films (AlxIn1−xN), and multilayered films (GaN/InN)n were grown by rf magnetron sputtering at low substrate temperatures below 500 °C. These films were characterized by x-ray diffraction, Raman scattering, optical absorption, and electrical measurements; it was proved that they have high crystal quality comparable to the previously reported data obtained by other growth methods. Dependence of the band-gap energy of AlxIn1−xN on composition x was determined. Multilayered films of (GaN/InN) were prepared for the first time; these films showed the characteristic diffusion property to make an ordered-alloy superlattice.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.344181
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