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A quantitative study of the creation of EL2 defects in GaAs by plastic deformation (1989)

Vignaud, D. ; Farvacque, J. L.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 65 (1989), S. 1516-1520

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Optical absorption quenching measurements have been carried out on a lot of plastically deformed n+ samples (either Si or Se doped), which were EL2 free before deformation. It is shown that the density of EL2 defects created during the deformation increases linearly first with the dislocation density and then saturates for higher strains. The introduction rate of EL2 is also higher in the Se- than in the Si-doped material. Photoluminescence characterization of these same samples shows the appearance of the 0.93-eV band only after deformation; this band being associated with the divacancy. A possible model of EL2 creation during deformation is finally proposed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.343421

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