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Laser-induced reemission of silicon atoms implanted into quartz (1988)

Shimizu, Tsutomu ; Itoh, Noriaki ; Matsunami, Noriaki

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 3663-3666

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Reemission of Si atoms implanted into SiO2 by both pulse-laser irradiation and thermal annealing has been investigated using the techniques of optical absorption and Rutherford backscattering. It is found that, even though the number of Si atoms in the surface is reduced in both cases, laser irradiation shifts the distribution of implanted Si atoms toward the surface, whereas thermal annealing shifts the distribution backward. The results are explained in terms of thermal diffusion arising from a temperature gradient induced by nonuniform optical absorption.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341407

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