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Minority-carrier lifetime in ITO/InP heterojunctions (1988)

Ahrenkiel, R. K. ; Dunlavy, D. J. ; Hanak, T.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 1916-1921

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The relationship between photoluminescence lifetime and minority-carrier lifetime is derived for window/absorber heterojunctions by the method of Laplace transforms. The model includes the effects of diffusion to the depletion region and self-absorption of the emitted radiation. The model is applied to InP photoluminescence generated by pulsed laser excitation of indium-tin-oxide (ITO)/InP heterojunctions. The photoluminescence lifetime of a device with NA=1×1016 cm−3 is about 21 ns. The bulk lifetime of the device can be fit with a lifetime of about 30 ns. The lifetime in the unprocessed substrate exceeds 200 ns indicating that recombination is induced by ITO processing.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341743

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