ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The effect of interfacial oxide on defect generation and regrowth rate in solid-phase epitaxy of amorphized Si has been investigated. Si-ion implantation was used to amorphize the chemical-vapor-deposited polycrystalline Si (poly-Si) and to reduce the oxygen concentration at the poly/single-crystalline Si interface. The crystallinity of the epitaxial layers obtained under different conditions, such as surface treatment, Si-ion-implantation dose, and thermal annealing, was examined by high-resolution electron microscopy and Rutherford backscattering spectroscopy (RBS). Experimental results showed that microtwins were induced by inhomogenious oxygen distribution at the interface and that low defect density (the channeling minimum yield in RBS; χmin=7%) could be achieved for specimens with maximum interfacial oxide thickness of about 4 A(ring).
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340008
