Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
63 (1988), S. 183-189
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The dominant carbon-related radiation damage center in silicon was studied in detail by deep level transient spectroscopy. Samples with different carbon and oxygen content were implanted with gradually increasing proton fluence. Two energetically closely spaced levels were revealed and tentative identities were assigned. One at ET+EV=0.344 eV (σp=1.1×10−16 cm2) is assigned as the C+Oi complex, and that at ET+EV=0.370 eV (σp=8×10−18 cm2) is assigned as the Cs-Sii-Cs complex. It was shown that the concentration of these defects is correlated to the total concentration of carbon in the crystal.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.340487
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