Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 2989-2993
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Epitaxial thin films of LiNbO3 and LiTaO3 were grown on sapphire substrates by the rf-magnetron sputtering method. Structural characterization was made by several spectroscopic measurements: x-ray diffraction, Raman scattering, and optical absorption. We obtained epitaxial thin films with lattice-mismatched strained layers, without misfit defects which are usually created at the interface. Impurity-ion (Nd3+ and Cr3+) doped films were also grown; these films had larger refractive indices than the pure films. Furthermore, the heteroepitaxial thin films of up to 10 alternating LiNbO3/LiTaO3 layers were successfully grown, and their periodic structures were studied by optical second-harmonic generation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339385
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