Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 3060-3061
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The deposition rate dependence of hydrogenated amorphous silicon prepared by capacitively coupled rf glow discharge upon substrate temperature has been studied using an optical emission spectroscopy. Both the plasma emission intensity and the deposition rate increased more than twice by changing the substrate temperature from 200 to 300 °C. Under the conditions of pure SiH4 60 sccm, 1 Torr, and electrode spacing 18 mm, the deposition rate is found to be proportional to the intensity of H2 continuum radiation at 200–500 nm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339348
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