Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
60 (1986), S. 1212-1214
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The primary ion beam column of a combined secondary ion/sputtered neutral mass spectrometer is used for in situ ion implantation of precise amounts of a given species superimposed as an internal standard upon its residual concentration. Subsequent depth profile analysis is done in the instrument after switching to another primary projectile. It is shown that concentrations can be determined with an accuracy of 4% from the known in situ implanted fluence by comparing the original and the added amounts. In this way, the helium concentration in a silicon sample (produced by external implantation) and the interfacial oxygen concentration between an amorphous and crystalline Si layer are determined quantitatively.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337367
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