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A novel approach for doping impurity in thin film in situ by dual-beam pulsed-laser deposition (1998)

Ong, C. K. ; Xu, S. Y. ; Zhou, W. Z.

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 69 (1998), S. 3659-3661

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: Doping techniques are of great importance in developing new materials and devices. We present here a novel approach for doping impurity in thin film by using dual-beam pulsed-laser deposition technique that allows in situ controlling doping under a wide range of conditions. We demonstrated doping Ag in situ in YBa2Cu3O7−δ thin films and for the first time observed long bar-like Ag structures with a length up to 150 μm in the as-deposited films, which may have important application in the fabrication of superconductor-normal metal-superconductor Josephson junctions. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1149168

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