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A simple technique to measure stress in ultrathin films during growth (1995)

Sander, D. ; Enders, A. ; Kirschner, J.

[S.l.] : American Institute of Physics (AIP)

Review of Scientific Instruments 66 (1995), S. 4734-4735

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ISSN: 1089-7623

Source: AIP Digital Archive

Topics: Physics , Electrical Engineering, Measurement and Control Technology

Notes: We demonstrate an easy implementation of the cantilever bending beam approach to measure stress during film growth in ultrahigh vacuum. Using a simple and compact optical deflection technique, film stress with sub-monolayer sensitivity can be detected. A stress measurement during FeSi2 formation on Si(111) is presented. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1145316

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